BFQ82 Datasheet, PDF (16/18 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)

BFQ 82
Common Emitter S Parameters (continued)
f
GHz
S11
MAG
ANG
S21
MAG
ANG
IC = 30 mA, VCE = 8 V, Z0 = 50 Ω
0.10
0.559 – 105.0 36.41
0.15
0.585 – 127.1 28.14
0.20
0.600 – 140.8 22.54
0.25
0.610 – 149.6 18.67
0.30
0.616 – 156.3 15.87
0.40
0.621 – 166.0 12.17
0.50
0.626 – 172.7 9.86
0.60
0.628 – 178.1 8.27
0.70
0.633
177.6 7.11
0.80
0.636
173.8 6.24
0.90
0.641
170.7 5.55
1.00
0.646
167.3 4.99
1.20
0.653
161.1 4.17
1.40
0.657
155.4 3.59
1.50
0.655
153.1 3.37
1.60
0.654
150.4 3.17
1.80
0.663
145.8 2.82
2.00
0.671
141.6 2.53
2.50
0.702
132.0 2.06
3.00
0.706
120.2 1.75
130.0
117.9
110.0
104.4
100.1
93.5
88.6
84.4
80.7
77.2
74.1
71.1
65.8
60.8
58.2
55.5
50.2
45.3
35.3
22.6
S12
MAG
0.020
0.024
0.027
0.029
0.032
0.036
0.041
0.046
0.051
0.056
0.062
0.067
0.078
0.089
0.095
0.101
0.112
0.122
0.149
0.174
ANG
54.4
49.3
47.2
47.2
47.8
50.2
51.9
53.2
54.6
55.2
55.6
55.7
55.6
54.8
54.2
53.3
51.3
49.2
44.8
38.3
S22
MAG
ANG
0.651
0.510
0.415
0.350
0.303
0.244
0.208
0.187
0.172
0.161
0.154
0.148
0.138
0.132
0.132
0.133
0.138
0.142
0.159
0.185
– 52.3
– 65.9
– 75.6
– 82.9
– 89.0
– 98.6
– 106.2
– 112.3
– 117.8
– 122.5
– 127.0
– 131.9
– 139.8
– 145.8
– 147.8
– 149.8
– 154.5
– 161.1
– 174.2
178.2
S11, S22 = f (f)
IC = 30 mA, VCE = 8 V, Z0 = 50 Ω
S12, S21 = f (f)
IC = 30 mA, VCE = 8 V, Z0 = 50 Ω