BFQ82 Datasheet, PDF (1/18 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)

NPN Silicon RF Transistor
q For low-noise, high-gain amplifiers up to 2 GHz.
q Linear broadband applications at collector currents
up to 40 mA.
q Hermetically sealed ceramic package.
q fT = 8 GHz
F = 1.1 dB at 800 MHz
BFQ 82
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 82
Marking
82
Ordering Code
(tape and reel)
Q62702-F1189
Pin Configuration
1 2 34
B ECE
Package¹⁾
Cerec-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f ≥ 10 MHz
Base current
Peak base current, f ≥ 10 MHz
Total power dissipation, TS ≤ 95 ˚C³⁾
Junction temperature
Ambient temperature range
Storage temperature range
Symbol
VCE0
VCES
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
TA
Tstg
Values
Unit
12
V
20
20
2
80
mA
80
10
10
500
mW
175
˚C
– 65 … + 175
– 65 … + 175
Thermal Resistance
Junction - ambient²⁾
Junction - case³⁾
Rth JA
Rth JS
≤ 240
K/W
≤ 160
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.}
3) _{TS is measured on the collector lead at the soldering point to the pcb.}