ID246 Datasheet, PDF (21/38 Pages) Sharp Electrionic Components – Flash Memory Card

SHARP
ID246 SERIES PRODUCT OVERVIEW
20
10. 1. 4 Device Geometry Definition
This field provides critical details of the flash device geometry.
Table 14. Device Geometry Definition
Offsel
(Word Address)
2lH
Length
OlH
I
Device Size
15H (15H=21,22’=2097152=2M
Description
Bytes
28H. 29H
2Ali. 2BH
2CH
2DH, 2EH
02H
Flash Device Interface description
02H,OOH (x8/x16 supports x8 and xl6 via BYlE#)
02H
Maximum Number of Bytes in Multi word/byte write
05H.OOH (2’=32 Bytes)
OlH
Number of Erase Block Regions within device
01 H (symmetricatly blocked)
02H
Tbe Number of Erase Blocks
lFH,OOH (lFH=31 =>31+1=32 Blocks
2FH. 30H
02H
The Number of “256 Bytes” cluster in a Erase block
00H,OlH (OlOOH=256 =>256 Bytes x 256=643 Bytes in a Erase Block)
T1?5641
10. 1. 5 SCS OEM Specific Extended Query Table
Certain flash featuresand commandsmay be optional in a vendor-specificalgorithm specification.The optional
vendor-specific Query table(s) may be usedto specify this and other types of information. Thesestructuresare
defined solely by the flash vendor(s).
Table 15. SCSOEM Specific Extended Query Table
offset
(Word Address)
3lH,32H,33H
34H
35H
36H. 37H. 38H. 39H
3AH
3BH, 3CH
3DH
3EH
3FH
Length
03H
OlH
OlH
04H
OIH
02H
OlH
OlH
reserved
Description
PRI
50H, 52H, 49H
3 1 H (1) Major Version Number
, ASCII
30H (0) Minor Version Number, ASCII
OFH, OOH, OOH, COH
Optional Command support
bitO=l : Chip Erase Supported
bitl=l : Suspend Erase Supported
b&2=1 : Suspend Write Supported
bit3=1 : Lock/Unlock Sqported
bit4=0 : Queued Erase. Not Supported
bit5-31=0 : reserved for future use.
OlH
Supported Functions after Suspend
bitO=l : Write Supported after Erase Suspend
bit l-7=0 : reserved for future use
03H, OOH
Block Status Register Mask
bitOr : Block Status Register
bitl=l : Block Status Register
biQ-15=0 : reserved for future
Lock Bit (BSR.01
Valid Bit [BSR.l]
use
active
active
Vcc Logic Supply Optimum Write/Erase voltage (highest performance)
50H (5.OV)
V, Progr amming Supply Optimum Write/Erase
performance)
50H (5.OV)
voltage (highest
Reserved for future versions of the SCS Spccitication
rrrm-ot