ID246 Datasheet, PDF (19/38 Pages) Sharp Electrionic Components – Flash Memory Card

SHARP
ID246 SERIES PRODUCT OVERVIEW
10.1 Query Command
Query database can be read by writing Query comman d (98H). Following the command write, read cycle from
address shown in Table 1l-15 retrievethe critical information to write, erase and otherwise control the flash
component.
In word mode, Ds-Dis output the Query data of odd Byte Devices.
Table 10. Example of Query Structure Output
X8 mode
Offset Address
T
(A6 - Al)
A0
A,, A,, A,, A,, A,, A,
1 , 0 , 0 , 0 , 0 , 0 (20H)
1 , 0 , 0 , 0 , 0 , l(21H)
1 ,o,o,o, 1 ,oGw
1,0,0,0,1,1(23H)
0 = Even
1 = Odd
A,, A,, A,, A,, A,
Xl6 mode
l,O,O,O,O
(10H)
X
1 ,O,O,O,l
(11H)
output
I
%-D*
D,-Do
High-z
“Q”
High-Z
“Q”
High-Z
“R”
High-Z
“R”
“Q”
“Q”
“R”
“R”
TllSZE-01
10. 1. 1 Block Status Register
This field provides lock configuration and erase status for the specified block. These informations are only avail-
able when device is ready (SR.7=1). If block erase or full chip erase operation is finished irregulary, block erase
status bit will be set to “l”,this block is invalid.
Table 11. Query Block Status Register
Offset
(Word Address)
Length
Description
(B A+2)H
OlH
Block Status Register
DO : Block Lock Configuration
O=Block is unlocked
l=Block is locked
Dl : Block Erase Status
O=Last erase operation completed successfully
l=Last erase operation not completed successfully
D2-7: Reserved for future use
NOTE: l.BA=The beginning of a Block Address.
T1153E41