LRS1383 Datasheet, PDF (13/114 Pages) Sharp Electrionic Components – STACKED CHIP 32M FLASH AND 8M SRAM

LRS1383
11
5.4 OTP Block Address Map
5.5 Functions of Block Lock⁽¹⁾ and Block Lock-Down
State
F-WP
Current State
DQ₁₍₂₎
DQ₀₍₂₎
State Name
Erase/Program Allowed ⁽³⁾
[000]
0
0
0
Unlocked
Yes
[001]⁽⁴⁾
0
0
1
Locked
No
[011]
0
1
1
Locked-down
No
[100]
1
0
0
Unlocked
Yes
[101]⁽⁴⁾
1
0
1
Locked
No
[110]⁽⁵⁾
1
1
0
Lock-down Disable
Yes
[111]
1
1
1
Lock-down Disable
No
Note:
1. OTP (One Time Program) block has the lock function which is different from those described above.
2. DQ₀ = 1: a block is locked; DQ₀ = 0: a block is unlocked.
DQ₁ = 1: a block is locked-down; DQ₁ = 0: a block is not locked-down.
3. Erase and program are general terms, respectively, to express: block erase, full chip erase and (page buffer) program
operations.
4. At power-up or device reset, all blocks default to locked state and are not locked-down, that is, [001] (F-WP = 0) or [101]
(F-WP = 1), regardless of the states before power-off or reset operation.
5. When F-WP is driven to V_IL in [110] state, the state changes to [011] and the blocks are automatically locked.