SKM200GB124 Datasheet, PDF (5/6 Pages) Semikron International – Low Loss IGBT Modules

1
K/W
0,1
M 20 0G1 24 .X LS -1 9
1
K/W
0,1
M2 0 0G1 24 .X LS -2 0
0,01
0,001
Z_thJC
single pulse
0,0001
0,00001 0,0001
t_p
0,001
0,01
D=0,50
0,20
0,10
0,05
0,02
0,01
0,1
1
s
0,01
0,001
Z_thJC
single pulse
0,0001
0,00001 0,0001
t_p
0,001
D=0,5
0,2
0,1
0,05
0,02
0,01
0,01
0,1
1
s
Fig. 19 Transient thermal impedance of IGBT
Z_thJC = f (t_p); D = t_p / t_c = t_p · f
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z_thJC = f (t_p); D = t_p / t_c = t_p · f
280
A
240
200
160
M200G124.X LS-22
280
R_G=
V_CC = 600 V
T_j = 125 °C
4 Ω _{VGE = ± 15 V}
A
240
200
6Ω
160
M200G124.X LS -23
R_G= 4 Ω
6Ω
V_CC = 600 V
T_j = 125 °C
V_GE = ± 15 V
I_F = 150 A
120
10 Ω
80
17 Ω
40 Ω
40
I_RR
0
0
40
I_F
80 120 160 200 240
A
Fig. 22 Typ. CAL diode peak reverse recovery
current I_RR = f (I_F; R_G)
Typical Applications
include
Switched mode power supplies
DC servo and robot drives
Inverters
DC choppers
AC motor speed control
UPS Uninterruptable power supplies
General power switching applications
Electronic (also portable) welders
120
10 Ω
17 Ω
80
40 Ω
40
I_RR
0
0 1000
di_F/dt
2000
3000
4000
5000
6000 7000
A/µs
Fig. 23 Typ. CAL diode peak reverse recovery
current I_RR = f (di/dt)
35
µC
30
25
10 Ω
17 Ω
20 ^{40 Ω}
M2 0 0G1 24 .X LS -2 4
6Ω
R_G= 4 Ω _IF=
200 A
V_CC = 600 V
T_j = 125 °C
V_GE = ± 15 V
150 A
110 A
15
75 A
10
40 A
5
Q_rr
0
0
di_F/dt
2000
4000
6000
8000
A/µs
Fig. 24 Typ. CAL diode recovered charge
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