SKM200GB124 Datasheet, PDF (4/6 Pages) Semikron International – Low Loss IGBT Modules

SKM 200 GB 124 D
20
V
18
16
14
12
600V
M200G124.X LS-13
R_thjc = 0,005
100
I_Cpuls = 150 A
nF
800V
10
M200G124.X LS -14
V_GE = 0 V
f = 1 MHz
C_ies
10
8
C_oes
6
1
4
2
V_GE
0
0
200 400 600 800 1000 1200
Q_Gate
nC
C
0,1
0 _VCE 10
C_res
20
V ³⁰
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.V_CE
1000
ns
M200G124.X LS-15
t_{dof f}
T_j = 125 °C
V_CE = 600 V
V_GE = ± 15 V
R_Gon = 7 Ω
R_Goff = 7 Ω
induct. load
10000
ns
1000
M200G124.X LS -16
t_{dof f}
T_j = 125 °C
V_CE = 600 V
V_GE = ± 15 V
I_C = 150 A
induct. load
100
t_don
t_don
t_r
t_f
100
t_r
t
t_f
t
10
0 50
I_C
100 150 200 250
Fig. 15 Typ. switching times vs. I_C
300 350
A
10
0
10
20
30
40
50
60
R_G
Ω
Fig. 16 Typ. switching times vs. gate resistor R_G
200
A
150
100
T_j=125°C, typ.
T_j=25°C, typ.
T_j=125°C, max.
T_j=25°C, max.
M200GB 124.X LS -17
50
I_F
0
0
1
V_F
2
3
V
Fig. 17 Typ. CAL diode forward characteristic
10
mJ
8
M200G124.X LS -18
R_G=
4Ω
6Ω
V_CC = 600 V
T_j = 125 °C
V_GE = ± 15 V
6
10 Ω
17 Ω
4
40 Ω
2
E_{of f D}
0
0
40
I_F
80 120 160 200 240
A
Fig. 18 Diode turn-off energy dissipation per pulse
B 6 – 160
0898
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