SKM200GB124 Datasheet, PDF (1/6 Pages) Semikron International – Low Loss IGBT Modules

Absolute Maximum Ratings
Symbol Conditions ¹⁾
V_CES
V_CGR
I_C
I_CM
V_GES
P_tot
T_j, (T_stg)
V_isol
humidity
climate
R_GE = 20 kΩ
T_case = 25/85 °C
T_case = 25/85 °C; t_p = 1 ms
per IGBT, T_case = 25 °C
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
Inverse Diode
I_F = –I_C T_case = 25/80 °C
I_FM = –I_CM T_case = 25/80 °C; t_p = 1 ms
I_FSM
t_p = 10 ms; sin.; T_j = 150 °C
I²t
t_p = 10 ms; T_j = 150 °C
Characteristics
Symbol Conditions ¹⁾
V_(BR)CES
V_GE(th)
I_CES
I_GES
V_CEsat
V_CEsat
g_fs
V_GE = 0, I_C = 4 mA
V_GE = V_CE, I_C = 6 mA
V_GE = 0
T_j = 25 °C
V_CE = V_CES T_j = 125 °C
V_GE = 20 V, V_CE = 0
I_C = 150 A V_GE = 15 V;
I_C = 200 A T_j = 25 (125) °C
V_CE = 20 V, I_C = 150 A
C_CHC
C_ies
C_oes
C_res
L_CE
per IGBT
V_GE = 0
V_CE = 25 V
f = 1 MHz
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
V_CC = 600 V
V_GE = –15 V / +15 V³⁾
I_C = 150 A, ind. load
R_Gon = R_Goff = 7Ω
T_j = 125 °C
Inverse Diode ⁸⁾
V_F = V_EC
V_F = V_EC
V_TO
r_t
I_RRM
Q_rr
I_F = 150 A V_GE = 0 V;
I_F = 200 A T_j = 25 (125) °C
T_j = 125 °C ²⁾
T_j = 125 °C ²⁾
I_F = 150 A; T_j = 125 °C²⁾
I_F = 150 A; T_j = 125 °C²⁾
Thermal characteristics
R_thjc
R_thjc
R_thch
per IGBT
per diode
per module
© by SEMIKRON
Values
1200
1200
290 / 200
580 / 400
± 20
1350
–40 ... +150 (125)
2500
Class F
40/125/56
195 / 130
580 / 400
1450
10 500
Units
V
V
A
A
V
W
°C
V
SEMITRANS^® M
Low Loss IGBT Modules
SKM 200 GB 124 D
A
A
A
A²s
SEMITRANS 3
min.
≥ V_CES
4,5
–
–
–
–
–
62
–
–
–
–
–
–
–
–
–
–
–
typ.
–
5,5
0,4
12
–
2,1(2,4)
2,5(3,0)
–
–
11
1,6
0,8
–
75
50
520
50
21
19
max. Units
–
V
6,5
V
14
mA
–
mA
0,32
µA
2,45(2,85) V
–
V
–
S
700
pF
15
nF
2
nF
1
nF
20
nH
–
ns
–
ns
–
ns
–
ns
–
mWs
–
mWs
– 2,0(1,8)
2,5
V
– 2,25(2,05) –
V
–
1,1
1,2
V
–
–
7
mΩ
–
78
–
A
–
19,5
–
µC
–
–
0,09 °C/W
–
–
0,25 °C/W
–
–
0,038 °C/W
GB
Features
• MOS input (voltage controlled)
• N channel, homogeneous Silicon
structure NPT-IGBT (Non punch
through)
• Low saturation voltage
• Low inductance case
• Low tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6 * I_cnom
• Latch-up free
• Fast & soft inverse CAL diodes ⁸⁾
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
• Large clearance (12 mm) and
creepage distances (20 mm)
Typical Applications → B 6 – 161
• Switching (not for linear use)
• Inverter drives
• UPS
1) _{Tcase = 25 °C, unless otherwise}
specified
2) _{IF = – IC, VR = 600 V,}
–di_F/dt = 1500 A/µs, V_GE = 0 V
3) _{Use VGEoff = –5... –15 V}
8) _{CAL = Controlled Axial Lifetime}
Technology
0898
Cases and mech. data
→ B 6 – 162
B 6 – 157