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SKM200GB124 Datasheet, PDF (3/6 Pages) Semikron International – Low Loss IGBT Modules
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300
A
17V
250
15V
13V
200
11V
9V
7V
150
M2 0 0G1 24 .X LS -9
100
50
IC
0
0 VCE 1
2
3
4V 5
Fig. 9 Typ. output characteristic, tp = 80 µs; 25 °C
Pcond(t) = VCEsat(t) · IC(t)
VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) · IC(t)
VCE(TO)(Tj) ≤ 1,3 + 0,0005 (Tj –25) [V]
typ.: rCE(Tj) = 0,0053 + 0,000017 (Tj –25) [Ω]
max.: rCE(Tj) = 0,0077 + 0,000023 (Tj –25) [Ω]
+2
valid for VGE = + 15 –1 [V]; IC > 0,3 ICnom
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
M2 0 0G1 24 .X LS -8
300
Tj = 150 °C
A
VGE ≥ 15V
250
200
150
100
50
IC
0
0
40
TC
80
120
160
°C
Fig. 8 Rated current vs. temperature IC = f (TC)
300
A
250
17V
15V
200
13V
11V
9V
150
7V
M 20 0G1 24 .X LS -1 0
100
50
IC
0
0 VCE 1
2
3
4V 5
Fig. 10 Typ. output characteristic, tp = 80 µs; 125 °C
300
A
250
M200G124.X LS-12
200
150
100
50
IC
0
0
2
4
6
8 10 12 14
VGE
V
Fig. 12 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V
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