SKYPER42R Datasheet, PDF (11/18 Pages) Semikron International – IGBT Driver Core

SKYPER^® 42 R
3.7. Shut Down Input (SDI) - Primary
The shut down input / error input signal can gather error signals of other hardware components for switching off
the IGBT (input HIGH = no turn-off; input LOW = turn-off).
Connection SDI
Hints
A LOW signal at PRIM_nERROR_IN will set the error latch and
force the output PRIM_nERROR_OUT into HIGH state.
Switching pulses from the controller will be ignored.
The SDI function can be disabled by no connection or
connecting to 5V.
3.8. Gate resistors - Secondary
The output transistors of the driver are MOSFETs. The sources of the MOSFETs are separately connected to
external terminals in order to provide setting of the turn-on and turn-off speed of each IGBT by the external
resistors R_Gon and R_Goff. As an IGBT has input capacitance (varying during switching time) which must be
charged and discharged, both resistors will dictate what time must be taken to do this. The final value of the
resistance is difficult to predict, because it depends on many parameters as DC link voltage, stray inductance of
the circuit, switching frequency and type of IGBT.
Connection RGon, RGoff
Application Hints
The gate resistor influences the switching time, switching losses,
dv/dt behaviour, etc. and has to be selected very carefully. The
gate resistor has to be optimized according to the specific
application.
By increasing RGon the turn-on speed will decrease. The reverse
peak current of the free-wheeling diode will diminish.
By increasing RGoff the turn-off speed of the IGBT will decrease.
The inductive peak over voltage during turn-off will diminish.
In order to ensure locking of the IGBT even when the driver
supply voltage is turned off, a resistance (RGE) has to be
integrated.
Tpically, IGBT modules with a large current rating will be driven
with smaller gate resistors and vice versa.
Te value of gate resistors will be between the value indicated in
the IGBT data sheet and roughly twice this value.
In most applications, the turn-on gate resistor RG(on) is
smaller than the turn-off gate resistor RG(off).
Depending on the individual parameters, RG(off) can be roughly
twice the RG(on) value.
Place the gate resistances for turn-on and turn-off close
together.
Please note:
Do not connect the terminals SEC_TOP_IGBT_ON with SEC_TOP_IGBT_OFF and SEC_BOT_IGBT_ON
with SEC_BOT_IGBT_OFF, respectively.
10
2011-04-04 – Rev05
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