FGF65A3H Datasheet, PDF (9/15 Pages) Sanken electric – Trench Field Stop IGBTs with Fast Recovery Diode

KGF65A3H, MGF65A3H, FGF65A3H
1000
Inductive load,
I_C = 30 A, V_CE = 400 V,
V_GE = 15 V, T_J = 175 °C
t_d(off)
t_r
100
t_f
t_d(on)
10
10
100
Gate Resistor, R_G (Ω)
Figure 18. Switching Time vs. Gate Resistor
4
Inductive load,
I_C = 30 A, V_CE = 400 V,
V_GE = 15 V, R_G = 10 Ω
3
2
E_on + E_off
E_on
1
E_off
0
25 50 75 100 125 150 175
Junction Temperature, T_J (°C)
Figure 19. Switching Loss vs. Junction Temperature
10
Inductive load,
V_CE = 400 V, V_GE = 15 V,
8 ^RG ^{= 10 Ω, T}J ^{= 175 °C}
E_on + E_off
6
E_on
4
2
E_off
0
0 10 20 30 40 50 60 70 80 90
Collector Current, I_C (A)
Figure 20. Switching Loss vs. Collector Current
4
Inductive load,
I_C = 30 A, V_CE = 400 V,
V_GE = 15 V, T_J = 175 °C
3
2
1
E_on + E_off
E_on
E_off
0
10 20 30 40 50 60 70 80 90 100
Gate Resistor, R_G (Ω)
Figure 21. Switching Loss vs. Gate Resistor
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
9
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016