FGF65A3H Datasheet, PDF (5/15 Pages) Sanken electric – Trench Field Stop IGBTs with Fast Recovery Diode

KGF65A3H, MGF65A3H, FGF65A3H
Rating and Characteristic Curves
1000
100
10
1
0.1
1
IGBT,
Single pulse,
T_J = 175 °C
10
100
1000
Collector-Emitter Voltage, V_CE (V)
Figure 2. IGBT Reverse Bias Safe Operating Area
300
250
200
150
100
TO3P-3L,
50 TO247-3L,
T_J < 175 °C
0
25 50 75 100 125 150 175
Case Temperature, T_C (°C)
Figure 4. Power Dissipation vs. TO3P-3L and
TO247-3L Case Temperature
1000
100
10 μs
100 μs
10
1
IGBT,
Single pulse,
T_J = 25 °C
0.1
1
10
100
Collector-Emitter Voltage, V_CE (V)
1000
Figure 3. IGBT Safe Operating Area
100
80
60
40
20 ^TO3P-3L,
TO247-3L,
T_J < 175 °C
0
25 50 75 100 125 150 175
Case Temperature, T_C (°C)
Figure 5. Collector Current vs. TO3P-3L and
TO247-3L Case Temperature
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
5
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016