FGF65A3H Datasheet, PDF (11/15 Pages) Sanken electric – Trench Field Stop IGBTs with Fast Recovery Diode

KGF65A3H, MGF65A3H, FGF65A3H
3.0
Inductive load,
2.5
V_R = 400 V,
I_F = 30 A
2.0
T_J = 175 °C
1.5
1.0
0.5
T_J = 25 °C
0.0
300 400 500 600 700 800 900 1000
di/dt (A/μs)
Figure 26. Diode Reverse Recovery Charge vs. di/dt
30
T_J = 175 °C
25
20
15
T_J = 25 °C
10
5
Inductive load,
V_R = 400 V,
I_F = 30 A
0
300 400 500 600 700 800 900 1000
di/dt (A/µs)
Figure 27. Diode Reverse Recovery Current vs. di/dt
10
1
0.1
0.01
0.001
1μ
Diode
IGBT
TO3P-3L,
TO247-3L,
T_C = 25 °C,
Single pulse,
V_CE < 5 V
10μ
100μ
1m
10m
100m
1
Pulse Width (s)
10
100
Figure 28. Transient Thermal Resistance (TO3P-3L and TO247-3L)
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
11
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016