FGF65A3H Datasheet, PDF (10/15 Pages) Sanken electric – Trench Field Stop IGBTs with Fast Recovery Diode

KGF65A3H, MGF65A3H, FGF65A3H
4
Inductive load,
I_C = 30 A, V_GE = 15 V,
R_G = 10 Ω, T_J = 175 °C
3
E_on + E_off
2
E_on
1
E_off
0
200 250 300 350 400 450 500
Collector-Emitter Voltage, V_CE (V)
Figure 22. Switching Loss vs. Collector-Emitter
Voltage
3
2
I_F = 60 A
I_F = 30 A
1
I_F = 10 A
0
-50 -25 0 25 50 75 100 125 150 175
Junction Temperature, T_J (°C)
Figure 24. Diode Forward Voltage
vs. Junction Temperature
90
80
70
60
50
40
30
20
10
0
0.0
T_J = 175 °C
0.5 1.0 1.5
T_J = −55 °C
T_J = 25 °C
2.0 2.5 3.0
Forward Voltage, V_F (V)
Figure 23. Diode Forward Characteristics
160
140
T_J = 175 °C
120
Inductive load,
V_R = 400 V,
I_F = 30 A
100
80
60
T_J = 25 °C
40
300 400 500 600 700 800 900 1000
di/dt (A/μs)
Figure 25. Diode Reverse Recovery Time vs. di/dt
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
10
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016