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FGF65A3H Datasheet, PDF (3/15 Pages) Sanken electric – Trench Field Stop IGBTs with Fast Recovery Diode | |||
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KGF65A3H, MGF65A3H, FGF65A3H
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Collector to Emitter Breakdown
Voltage
V(BR)CES IC = 100 μA, VGE = 0 V
650
â
â
V
Collector to Emitter Leakage Current
ICES
VCE = 650 V, VGE = 0 V
â
â
100
µA
Gate to Emitter Leakage Current
IGES
VGE = ±30 V
â
â
±500
nA
Gate Threshold Voltage
Collector to Emitter Saturation
Voltage
VGE(TH) VCE = 10 V, IC = 1 mA
4.0
5.5
7.0
V
VCE(sat) VGE = 15 V, IC = 30 A
â
1.9
2.37
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Cies
VCE = 20 V,
Coes
VGE = 0 V,
Cres
f = 1.0 MHz,
â
1800
â
â
200
â
pF
â
80
â
Qg
VCE = 520 V, IC = 30 A,
VGE = 15 V
â
60
â
nC
td(on)
â
30
â
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Energy (3)
Turn-off Energy
tr
td(off)
tf
Eon
Eoff
TJ = 25 °C,
see Figure 1.
â
30
â
ns
â
90
â
â
30
â
â
0.5
â
mJ
â
0.4
â
Turn-on Delay Time
td(on)
â
30
â
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Energy (3)
Turn-off Energy
Emitter to Collector Diode Forward
Voltage
Emitter to Collector Diode Reverse
Recovery Time
tr
td(off)
tf
Eon
Eoff
TJ = 175 °C,
see Figure 1.
VF
IF = 30 A
trr
IF = 30 A,
di/dt = 700 A/μs
â
30
â
ns
â
120
â
â
60
â
â
1.0
â
mJ
â
0.7
â
â
1.8
â
V
â
50
â
ns
(3) Energy losses include the reverse recovery of diode.
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
3
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
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