K4S281632O-LC75000 Datasheet, PDF (9/18 Pages) Samsung semiconductor – 54TSOP(II) with Lead-Free & Halogen-Free (RoHS compliant)

K4S280832O
K4S281632O
datasheet
11. DC CHARACTERISTICS (x8)
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
ICC1
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
Precharge standby current in
power-down mode
ICC2P CKE ≤ V_IL(max), tCC = 10ns
ICC2PS CKE & CLK ≤ V_IL(max), tCC = ∞
Precharge standby current in non
power-down mode
ICC2N ^{CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns}
Input signals are changed one time during 20ns
ICC2NS ^{CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞}
Input signals are stable
Active standby current in power-
down mode
ICC3P CKE ≤ V_IL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ V_IL(max), tCC = ∞
Active standby current in
non power-down mode
(One bank active)
ICC3N ^{CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns}
Input signals are changed one time during 20ns
ICC3NS ^{CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞}
Input signals are stable
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
Refresh current
ICC5 tRC ≥ tRC(min)
C
Self refresh current
ICC6 CKE ≤ 0.2V
L
NOTE :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S280832O-LC
4. K4S280832O-LL
5. Unless otherwise noticed, input swing level is CMOS(V_IH/V_IL=V_DDQ/V_SSQ).
Rev. 1.0
SDRAM
Version
60
75
40
40
2
2
2
2
15
15
10
10
5
5
5
5
25
25
20
20
60
60
100
100
2
2
0.8
0.8
Unit NOTE
mA
1
mA
mA
mA
mA
mA
mA
1
mA
2
mA
3
mA
4
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