K4S281632O-LC75000 Datasheet, PDF (12/18 Pages) Samsung semiconductor – 54TSOP(II) with Lead-Free & Halogen-Free (RoHS compliant)

K4S280832O
K4S281632O
datasheet
14. OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Symbol
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
Row cycle time
Last data in to row precharge
Last data in to Active delay
Last data in to new col. address delay
Last data in to burst stop
Col. address to col. address delay
Number of valid output data
tRRD(min)
tRCD(min)
tRP(min)
tRAS(min)
tRAS(max)
tRC(min)
tRDL(min)
tDAL(min)
tCDL(min)
tBDL(min)
tCCD(min)
CAS latency=3
CAS latency=2
Version
60
75
12
15
18
20
18
20
42
45
100
60
65
2
2 CLK + tRP
1
1
1
2
-
1
NOTE : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported.
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
6. t_RC = t_RFC, t_RDL = t_WR
Rev. 1.0
SDRAM
Unit
ns
ns
ns
ns
us
ns
CLK
-
CLK
CLK
CLK
ea
- 12 -