K4S281632O-LC75000 Datasheet, PDF (8/18 Pages) Samsung semiconductor – 54TSOP(II) with Lead-Free & Halogen-Free (RoHS compliant)

K4S280832O
K4S281632O
datasheet
8. ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Voltage on any pin relative to V_SS
Voltage on V_DD supply relative to V_SS
Storage temperature
Power dissipation
Short circuit current
V_IN, V_OUT
V_DD, V_DDQ
T_STG
P_D
I_OS
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Rev. 1.0
SDRAM
Unit
V
V
°C
W
mA
9. DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V_SS = 0V, T_A = 0 to 70°C)
Parameter
Symbol
Min
Typ
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
V_DD, V_DDQ
3.0
3.3
V_IH
2.0
3.0
V_IL
-0.3
0
V_OH
2.4
-
V_OL
-
-
I_LI
-10
-
NOTE :
1. V_IH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. V_IL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ V_IN ≤ V_DDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Max
3.6
V_DD+0.3
0.8
-
0.4
10
Unit
V
V
V
V
V
uA
NOTE
1
2
I_OH = -2mA
I_OL = 2mA
3
10. CAPACITANCE
(VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x8 : DQ0 ~ DQ7), (x16 : DQ0 ~ DQ15)
Symbol
Min
Max
Unit
CCLK
2.5
3.5
pF
CIN
2.5
3.8
pF
CADD
2.5
3.8
pF
COUT
4.0
6.0
pF
-8-