K4S281632O-LC75000 Datasheet, PDF (13/18 Pages) Samsung semiconductor – 54TSOP(II) with Lead-Free & Halogen-Free (RoHS compliant)

K4S280832O
K4S281632O
datasheet
15. AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
tCC
tSAC
tOH
tCH
tCL
tSS
tSH
tSLZ
tSHZ
60
Min
6
-
2.5
-
2.5
2.5
1.5
1
1
NOTE : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
4. tSS applies for address setup tiem, clock enable setup time, commend setup tiem and data setup time.
tSH applies for address setup tiem, clock enable setup time, commend setup tiem and data setup time.
Max
1000
5
-
5
-
Rev. 1.0
SDRAM
75
Min
Max
7.5
1000
10
5.4
6
3
3
2.5
2.5
1.5
0.8
1
5.4
6
16. DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Output rise time
Output fall time
Output rise time
Output fall time
Symbol
trh
tfh
trh
tfh
Condition
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Min
Typ
1.37
1.30
2.8
3.9
2.0
2.9
NOTE : 1. Rise time specification based on 0pF + 50 Ω to VSS, use these values to design to.
2. Fall time specification based on 0pF + 50 Ω to VDD, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to VSS.
Max
Unit
NOTE
4.37
Volts/ns
3
3.8
Volts/ns
3
5.6
Volts/ns
1,2
5.0
Volts/ns
1,2
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