S3C2500B Datasheet, PDF (618/623 Pages) Samsung semiconductor – 32-Bit RISC Microprocessor

S3C2500B
ELECTRICAL DATA
Table 18-3. D.C Electric Characteristics (Continued)
Symbol
PARAMETER
Condition
Min
V_OL
Low level output voltage
Type B1 to B12
I_OL = 1 µA
–
Type B1
I_OL = 1 mA
Type B2
I_OL = 2 mA
Type B4
I_OL = 4 mA
Type B8
I_OL = 8 mA
Type B12
I_OL = 12 mA
Type B16
I_OL = 16 mA
Type B20
I_OL = 20 mA
Type B24
I_OL = 24 mA
I_OZ
Tri-state output leakage
V_OUT = V_SS or V_DD
-10
current
I_DS
Quiescent supply current
I_DD
Maximum operating current
V_DD = 3.3 V/1.8 V
Frequency = 133MHz
C_IN
Input capacitance
Any Input Bi-directional
Buffers
C_OUT
Output capacitance
Any Output Buffer
Type
–
NOTE: Later, It will be updated.
Max
0.05
0.4
10
100
(note)
4
4
Unit
V
µA
µA
mA
pF
pF
18-3