K4H641638N Datasheet, PDF (6/10 Pages) Samsung semiconductor – DDR SDRAM Product Guide

General Information
DDR SDRAM
E. DDR SDRAM Module Product Guide
Org.
Den-
sity
Part Number
M368L3223HUS
32Mx 64 256MB
M368L3223JUS
M368L6423HUN
64Mx 64 512MB M368L6423JUN
M368L6523DUS^*2
128Mx 64 1GB M368L2923DUN^*2
64Mx 72
M312L6420HUS
512MB ^M312L6420JUS
M312L6523DZ3^*2
128Mx 72
1GB
M312L2920DUS^*2
M312L2923DZ3^*2
32Mx 64
64Mx 64
256MB
512MB
M470L3224HU0
M470L3224JU0
M470L6524DU0^*2
128Mx 64 1GB M470L2923DV0^*2
Speed
Composition
Comp.
Version
Voltage
Internal
Banks
184Pin DDR Unbuffered DIMM
CCC/CB3
32Mx 8 * 8pcs 256Mb H-die
CCC/CB3
32Mx 8 * 8pcs 256Mb J-die
CCC/CB3
CCC/CB3
64Mx 8 * 16pcs
64Mx 8 * 16pcs
256Mb H-die
256Mb J-die
2.5
± 0.2V^*3
4
CCC/CB3
64Mx 8 * 8pcs 512Mb D-die
CCC/CB3
64Mx 8 * 16pcs 512Mb D-die
184Pin DDR Low Profile Registered DIMM
CB0
64Mx 4 * 18pcs 256Mb H-die
CB0
64Mx 4 * 18pcs 256Mb J-die
CCC/CB3
64Mx 8 * 9pcs 512Mb D-die
2.5
± 0.2V^*3
4
CB0
128Mx 4 * 18pcs 512Mb D-die
CCC/CB3
64Mx 8 * 18pcs 512Mb D-die
200Pin DDR SODIMM
CB3
16Mx 16 * 8pcs 256Mb H-die
CB3
16Mx 16 * 8pcs 256Mb J-die
CB3
2.5
32Mx 16 * 8pcs 512Mb D-die _{± 0.2V}*3
4
CB3
64Mx 8 * 16pcs 512Mb D-die
External
Banks
1
1
2
1
1
2
2
PKG^*1
66pin
TSOP(II)
66pin
TSOP(II)
60ball
FBGA
66pin
TSOP(II)
60ball
FBGA
66pin
TSOP(II)
54pin
sTSOP(II)
Feature
SS,1250mil
DS,1250mil
SS,1250mil
DS,1250mil
DS,1200mil
SS,1125mil
DS,1200mill
DS,1125mil
DS,1250mi
Avail.
Now
Now
Now
Now
Now
Now
Now
Now
Now
Now
Now
Note 1 : (All of DDR DIMMs can support Lead-free)
U : TSOP II (Lead-Free)
V : sTSOP II (Lead-Free)
Z : FBGA (Lead-Free)
Note 2 : All of DDR components support both Leaded and Lead-free. And 256Mb H-die, J-
die and 512Mb D-die Lead-free is default PKG Type.
Note 3 :
VDD/VDDQ
DDR400
2.6V ± 0.1V
DDR333/266
2.5V ± 0.2V
December 2007