K4H641638N Datasheet, PDF (4/10 Pages) Samsung semiconductor – DDR SDRAM Product Guide

General Information
DDR SDRAM
C. Industrial temp DDR SDRAM Component Product Guide
Density
256Mb H-die
256Mb J-die
512Mb D-die
Bank Part Number Package^*1 & Power^*2 & Speed^*3
4Banks K4H561638J
UICC/IB3/IB0
UPCC/PB3/PB0
ZIB3/IB0
ZPB3/PB0
4Banks K4H561638J
LICC/IB3
LPCC/PB3
K4H510838D
4Banks
K4H511638D
UIB3/IB0
UPB3/PB0
ZIB3/IB0
ZPB3/PB0
UIB3/IB0
UPB3/PB0
ZIB3/IB0
ZPB3/PB0
Org.
Interface Refresh
16M x 16 SSTL_2 8K/64m
16M x 16 SSTL_2 8K/64m
64M x 8
SSTL_2 8K/64m
32M x 16
Power (V)
2.5 ± 0.2V^*4
2.5 ± 0.2V^*4
2.5 ± 0.2V^*4
Package
66pinTSOPII
60ball FBGA
66pinTSOPII
66pinTSOPII
60ball FBGA
66pinTSOPII
60ball FBGA
Avail.
Now
CS
Now
Note 1 :
U : TSOP II (Lead-free)
V : sTSOP II (Lead-free)
Z : FBGA (Lead-free)
L : TSOP II (Lead-free & Halogen-free)
H : FBGA (Lead-free & Halogen-free)
F : FBGA for 64Mb DDR (Lead-free & Halogen-free)
6 : sTSOP II (Lead-free & Halogen-free)
Note 2 :
I Industrial Temperature, Normal Power
P Industrial Temperature, Low Power
- Industrial Temp. (-40°C <Ta< 85°C)
Note 3 :
CL = 2
CL = 2.5
CL = 3
133Mhz
DDR266(A2)
DDR266(B0)
-
166Mhz
200Mhz
-
-
DDR333(B3)
-
-
DDR400(CC)
- "B3" has compatibility with "A2" and "B0"
Note 4 :
DDR400 DDR333/266
VDD/VDDQ 2.6V ± 0.1V 2.5V ± 0.2V
December 2007