K4H641638N Datasheet, PDF (2/10 Pages) Samsung semiconductor – DDR SDRAM Product Guide

General Information
DDR SDRAM
A. DDR SDRAM Component Ordering Information
12 3
4
5
6 78
9 10
11
K4 HXXXXXXX-XXXX
SAMSUNG Memory
DRAM
Product
Density & Refresh
Organization
Speed
Temperature & Power
Package Type
Revision
Interface (VDD, VDDQ)
Bank
1. SAMSUNG Memory : K
2. DRAM : 4
3. Product
H : DDR SDRAM
4. Density & Refresh
28 : 128Mb, 4K/64ms
56 : 256Mb, 8K/64ms
51 : 512Mb, 8K/64ms
1G: 1Gb, 8K/64ms
2G: 2Gb, 8K/64ms
5. Organization
04 : x 4
06 : x 4 Stack
07 : x 8 Stack
08 : x 8
16 : x16
6. Bank
3 : 4 Banks
8. Revision
M : 1st Gen.
A : 2nd Gen.
B : 3rd Gen.
C : 4th Gen.
D : 5th Gen.
E : 6th Gen.
F : 7th Gen.
G : 8th Gen.
H : 9th Gen.
J : 11st Gen.
N : 14th Gen.
9. Package Type
T : TSOP II
N : sTSOP II
G : FBGA
U : TSOP II (Lead-free)^*1
V : sTSOP II (Lead-free)^*1
Z : FBGA (Lead-free)^*1
L : TSOP II (Lead-free & Halogen-free)^*1
H : FBGA (Lead-free & Halogen-free)^*1
F : FBGA for 64Mb DDR (Lead-free & Halogen-free)^*1
6 : sTSOP II (Lead-free & Halogen-free)^*1
Note 1: All of Lead-free or Halogen-free product are in
compliance with RoHS
10. Temperature & Power
C : Commercial Temp.( 0°C ~ 70°C) & Normal Power
L : Commercial Temp.( 0°C ~ 70°C) & Low Power
I : Industrial Temp.( -40°C ~ 85°C) & Normal Power
P : Industrial Temp.( -40°C ~ 85°C) & Low Power
7. Interface ( VDD, VDDQ)
8 : SSTL-2 (2.5V, 2.5V)
11. Speed
CC : DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)
B3 : DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3)^*1
A2 : DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)
B0 : DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)
Note 1: "B3" has compatibility with "A2" and "B0"
December 2007