K4F171611D Datasheet, PDF (5/34 Pages) Samsung semiconductor – 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

K4F171611D, K4F151611D
K4F171612D, K4F151612D
CAPACITANCE (TA=25°C, VCC=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Input capacitance [A0 ~ A11]
CIN1
-
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
Output capacitance [DQ0 - DQ15]
CDQ
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition (5V device) : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-50
Min
Max
Random read or write cycle time
tRC
90
Read-modify-write cycle time
tRWC
133
Access time from RAS
tRAC
50
Access time from CAS
tCAC
15
Access time from column address
tAA
25
CAS to output in Low-Z
tCLZ
0
Output buffer turn-off delay
tOFF
0
13
Transition time (rise and fall)
tT
3
50
RAS precharge time
tRP
30
RAS pulse width
tRAS
50
10K
RAS hold time
tRSH
13
CAS hold time
tCSH
50
CAS pulse width
tCAS
13
10K
RAS to CAS delay time
tRCD
20
37
RAS to column address delay time
tRAD
15
25
CAS to RAS precharge time
tCRP
5
Row address set-up time
tASR
0
Row address hold time
tRAH
10
Column address set-up time
tASC
0
Column address hold time
tCAH
10
Column address to RAS lead time
tRAL
25
Read command set-up time
tRCS
0
Read command hold time referenced to CAS tRCH
0
Read command hold time referenced to RAS tRRH
0
Write command hold time
tWCH
10
Write command pulse width
tWP
10
Write command to RAS lead time
tRWL
13
Write command to CAS lead time
tCWL
13
-60
Min
Max
110
155
60
15
30
0
0
15
3
50
40
60
10K
15
60
15
10K
20
45
15
30
5
0
10
0
10
30
0
0
0
10
10
15
15
Units Notes
ns
ns
ns
3,4,10
ns
3,4,5
ns
3,10
ns
3
ns
6
ns
2
ns
ns
ns
ns
ns
ns
4
ns
10
ns
ns
ns
ns
11
ns
11
ns
ns
ns
8
ns
8
ns
ns
ns
ns