K4F171611D Datasheet, PDF (25/34 Pages) Samsung semiconductor – 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

K4F171611D, K4F151611D
K4F171612D, K4F151612D
FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
tRASP
¡ó
tRHCP
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
tCRP
tCRP
tASR
tRCD
tPC
tCAS
tRAD
tRAH
tCSH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
¡ó
tPC
tCP
tCAS
¡ó
tASC tCAH
¡ó
COLUMN
ADDRESS
¡ó
tRSH
tCP
tCAS
tASC
tRAL
tCAH
COLUMN
ADDRESS
VIH -
W
VIL -
tWCS tWCH
tWP
tWCS
tWCH
tWP
¡ó
tWCS tWCH
tWP
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tDS tDH
VALID
DATA-IN
¡ó
¡ó
tDS tDH
¡ó
VALID
DATA-IN
¡ó
tDS tDH
VALID
DATA-IN
tRP
tRPC
Don′t care
Undefined