K4F171611D Datasheet, PDF (26/34 Pages) Samsung semiconductor – 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

K4F171611D, K4F151611D
K4F171612D, K4F151612D
FAST PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
tCRP
tRCD
tCRP
tRASP
¡ó
tRHCP
tPC
tCP
tCAS
tPC
tCP
tCAS
¡ó
tRSH
tCAS
tASR
tRAD
tRAH
tCSH
tASC
tCAH
ROW
ADDR.
COLUMN
ADDRESS
tRAL
tASC tCAH
tASC tCAH
¡ó
COLUMN
COLUMN
ADDRESS
ADDRESS
¡ó
VIH -
W
VIL -
tWCS tWCH
tWP
tWCS
tWCH
tWP
¡ó
tWCS tWCH
tWP
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tDS tDH
VALID
DATA-IN
¡ó
¡ó
¡ó
¡ó
tDS tDH
VALID
DATA-IN
tDS tDH
¡ó
VALID
DATA-IN
¡ó
tRP
tRPC
Don′t care
Undefined