K4F171611D Datasheet, PDF (4/34 Pages) Samsung semiconductor – 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

K4F171611D, K4F151611D
K4F171612D, K4F151612D
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
Speed
K4F171612D
Max
K4F151612D
K4F171611D
ICC1
Don′t care
-50
-60
90
80
140
130
90
80
ICC2
Normal
L
Don′t care
1
1
1
1
2
1
ICC3
Don′t care
-50
-60
90
80
140
130
90
80
ICC4
Don′t care
-50
-60
90
80
90
80
90
80
ICC5
Normal
L
Don′t care
0.5
200
0.5
200
1
200
ICC6
Don′t care
-50
-60
90
80
140
130
90
80
ICC7
L
Don′t care
300
200
350
ICCS
L
Don′t care
150
150
200
ICC1* : Operating Current (RAS and UCAS, LCAS cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,
DQ=Don′t care, TRC=31.25us(4K/L-ver), 125us(1K/L-ver),
TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
CMOS DRAM
K4F151611D
140
130
2
1
140
130
90
80
1
200
140
130
250
200
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
uA
uA
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.