KAB01D100M Datasheet, PDF (36/72 Pages) Samsung semiconductor – Multi-Chip Package MEMORY

KAB0xD100M - TxGP
SEC Only
MCP MEMORY
READY/BUSY
The device has a R/B_F output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B_F pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B_F outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B_F)
and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 20). Its value can
be determined by the following guidance.
Vcc_R
Rp _ibusy
R/B_F
open drain output
Ready Vcc
0.8V
Busy
2.0V
GND
Device
tf
tr
Figure 20. Rp vs tr ,tf & Rp vs ibusy
@ Vcc = 3.3V, Ta = 25°C , C_L = 100pF
300n
200n
100n
3.3
381
Ibusy
1.65
290
3m
189
1.1
2m
tr
96
0.825
1m
4.2 _tf
4.2
4.2
4.2
Rp value guidance
1K
2K
3K
4K
Rp(ohm)
VCC(Max.) - VOL(Max.)
Rp =
=
IOL + ΣIL
2.7V
8mA + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
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Revision 1.11
August 2003