K9K2G08U0M-VCB0 Datasheet, PDF (36/38 Pages) Samsung semiconductor – 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of auto-
page read function. Auto-page read function is enabled only when PRE pin is tied to Vcc. Serial access may be done after power-on
without latency. Power-On Auto Read mode is available only on 3.3V device(K9K2GXXU0M).
Figure 16. Power-On Auto-Read (3.3V device only)
VCC
CLE
CE
WE
ALE
PRE
R/B
RE
I/OX
~ 1.8V
tR
1st
2nd
3rd
.... n th
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