K9K2G08U0M-VCB0 Datasheet, PDF (12/38 Pages) Samsung semiconductor – 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
AC Timing Characteristics for Command / Address / Data Input
Parameter
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Symbol
tCLS
tCLH
tCS
tCH
tWP
tALS
tALH
tDS
tDH
tWC
tWH
Min
0
10
0
10
25⁽¹⁾
0
10
20
10
45
15
Max
-
-
-
-
-
-
-
-
-
-
-
NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
Parameter
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
Symbol
Min
tR
-
tAR
10
tCLR
10
tRR
20
tRP
25
tWB
-
tRC
50
tREA
-
tCEA
-
tRHZ
-
tCHZ
-
tOH
15
tREH
15
tIR
0
tWHR
60
tRST
-
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Max
25
-
-
-
-
100
-
30
45
30
20
-
-
-
-
5/10/500⁽¹⁾
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
12