K9K2G08U0M-VCB0 Datasheet, PDF (27/38 Pages) Samsung semiconductor – 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
BLOCK ERASE OPERATION
CLE
CE
WE
ALE
RE
I/Ox
R/B
tWC
tWB
tBERS
60h Row Add1 Row Add2 Row Add3 D0h
Row Address
Auto Block Erase
Setup Command
Erase Command
Busy
70h
I/O 0
I/O0=0 Successful Erase
Read Status I/O0=1 Error in Erase
Command
27