K9K2G08U0M-VCB0 Datasheet, PDF (28/38 Pages) Samsung semiconductor – 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
Read ID Operation
CLE
CE
WE
tAR
ALE
RE
I/Ox
tREA
90h
00h
ECh
Device
Code*
XXh
Read ID Command
Address. 1cycle
Maker Code Device Code
4th cyc.*
Device
K9K2G08Q0M
K9K2G08U0M
K9K2G16Q0M
K9K2G16U0M
Device Code*(2nd Cycle)
AAh
DAh
BAh
CAh
4th Cycle*
15h
15h
55h
55h
ID Defintition Table
90 ID : Access command = 90H
1^st Byte
2^nd Byte
3^rd Byte
4^th Byte
Description
Maker Code
Device Code
Don’t care
Page Size, Block Size, Spare Size, Organization
28