K9K2G08U0M-VCB0 Datasheet, PDF (10/38 Pages) Samsung semiconductor – 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
K9K2GXXX0M-XCB0
Temperature Under Bias
K9K2GXXX0M-XIB0
Storage Temperature
K9K2GXXX0M-XCB0
K9K2GXXX0M-XIB0
Short Circuit Current
Symbol
VIN/OUT
VCC
TBIAS
TSTG
Ios
Rating
Unit
K9K2GXXQ0M(1.8V) K9K2GXXU0M(3.3V)
-0.6 to + 2.45
-0.6 to + 4.6
V
-0.2 to + 2.45
-0.6 to + 4.6
-10 to +125
°C
-40 to +125
-65 to +150
°C
5
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9K2GXXX0M-XCB0 :TA=0 to 70°C, K9K2GXXX0M-XIB0:TA=-40 to 85°C)
Parameter
Symbol
K9K2GXXQ0M(1.8V)
Min
Typ.
Max
K9K2GXXU0M(3.3V)
Unit
Min
Typ.
Max
Supply Voltage
VCC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
0
0
0
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9K2GXXQ0M(1.8V) K9K2GXXU0M(3.3V) Unit
Min Typ Max Min Typ Max
Operat- ^{Page Read with}
ing ^{Serial Access}
Current Program
Erase
ICC1
ICC2
ICC3
tRC=50ns, CE=VIL
IOUT=0mA
-
-
-
5
20
- 10
30
-
5
20
- 10
30
mA
-
5
20
- 10
30
Stand-by Current(TTL)
ISB1 CE=VIH, WP=PRE=0V/VCC
-
-
1
-
-
1
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
CE=VCC-0.2,
ISB2
WP=PRE=0V/VCC
ILI VIN=0 to Vcc(max)
ILO VOUT=0 to Vcc(max)
-
20 100
- 20
100
-
-
±20
-
-
±20
µA
-
-
±20
-
-
±20
Input High Voltage
VIH
VCC+
-
VCC-0.4 -
2.0 - VCC+0.3
0.3
Input Low Voltage, All inputs
VIL
-
-0.3
- 0.4 -0.3 -
0.8
K9K2GXXQ0M :IOH=-100µA
V
Output High Voltage Level
VOH
Vcc-0.1 -
-
2.4 -
-
K9K2GXXU0M :IOH=-400µA
Output Low Voltage Level
K9K2GXXQ0M :IOL=100uA
VOL
-
K9K2GXXU0M :IOL=2.1mA
- 0.1
-
-
0.4
K9K2GXXQ0M :VOL=0.1V
Output Low Current(R/B)
IOL(R/B)
3
4
-
8 10
-
mA
K9K2GXXU0M :VOL=0.4V
10