K4R571669D Datasheet, PDF (3/20 Pages) Samsung semiconductor – 256/288Mbit RDRAM(D-die)

K4R571669D/K4R881869D
Direct RDRAM^™
Overview
The RDRAM^ device is a general purpose high-perfor-
mance memory device suitable for use in a broad range of
applications including computer memory, graphics, video,
and any other application where high bandwidth and low
latency are required.
The 256/288-Mbit RDRAM devices are extremely high-
speed CMOS DRAMs organized as 16M words by 16 or 18
bits. The use of Rambus Signaling Level (RSL) technology
permits up to 1066 MHz transfer rates while using conven-
tional system and board design technologies. RDRAM
devices are capable of sustained data transfers up to 0.938ns
per two bytes (7.5ns per sixteen bytes).
The architecture of RDRAM devices allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The RDRAM device's 32 banks
support up to four simultaneous transactions.
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organiza-
tion are general and can be used for additional storage and
bandwidth or for error correction.
Features
♦ Highest sustained bandwidth per DRAM device
- 2.1GB/s sustained data transfer rate
- Separate control and data buses for maximized
efficiency
- Separate row and column control buses for
easy scheduling and highest performance
- 32 banks: four transactions can take place simul-
taneously at full bandwidth data rates
♦ Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
♦ Advanced power management:
- Multiple low power states allows flexibility in power
consumption versus time to transition to active state
- Power-down self-refresh
♦ Organization: 2kbyte pages and 32 banks, x 16/18
- x18 organization allows ECC configurations or
increased storage/bandwidth
- x16 organization for low cost applications
♦ Uses Rambus Signaling Level (RSL) for up to 1066MHz
operation
SAMSUNG 230
K4RXXXX69D-Fxxx
Figure 1: Direct RDRAM CSP Package
The 256/288-Mbit RDRAM devices are offered in a CSP
horizontal package suitable for desktop as well as low-
profile add-in card and mobile applications.
Key Timing Parameters/Part Numbers
Speed
Organization
Bin
I/O
Freq.
MHz
t_RAC
(Row
Access
Time) ns
-CT9 1066 32P
-CN9 1066 32
512Kx16x32s^a -CM9 1066 35
-CM8 800
40
-CK8 800
45
-CT9 1066 32P
-CN9 1066 32
512Kx18x32s -CM9 1066 35
-CM8 800
40
-CK8 800
45
Part Number
K4R571669D-F^bC^cT9
K4R571669D-FCN9
K4R571669D-FCM9
K4R571669D-FCM8
K4R571669D-FCK8
K4R881869D-FCT9
K4R881869D-FCN9
K4R881869D-FCM9
K4R881869D-FCM8
K4R881869D-FCK8
a.“32s” - 32 banks which use a “split” bank architecture.
b.“F” - WBGA package.
c.“C” - RDRAM core uses normal power self refresh.
Page 1
Version 1.4 July 2002