K4R571669D Datasheet, PDF (18/20 Pages) Samsung semiconductor – 256/288Mbit RDRAM(D-die)

K4R571669D/K4R881869D
Direct RDRAM^™
Absolute Maximum Ratings
Table 14: Absolute Maximum Ratings
Symbol
Parameter
V_I,ABS
V_DD,ABS, V_DDA,ABS
T_STORE
T_MIN
Voltage applied to any RSL or CMOS pin with respect to Gnd
Voltage on VDD and VDDA with respect to Gnd
Storage temperature
Minimum operation temperature
Note*) Component : refer to T_J,Θ_JC RIMM: refre to T_{PLATE, MAX}
Min
- 0.3
- 0.5
- 50
0
Max
V_DD+0.3
V_DD+1.0
100
Note*
Unit
V
V
°C
°C
I_DD - Supply Current Profile
Table 15: Supply Current Profile
I_DD value
RDRAM Power State and Steady-State Transaction Rates^a
I_DD,PDN
I_DD,NAP
I_DD,STBY
I_DD,REFRESH
I_DD,ATTN
I_DD,ATTN-W
I_DD,ATTN-R
Device in PDN, self-refresh enabled and INIT.LSR=0.
Device in NAP.
Device in STBY. This is the average for a device in STBY with (1) no
packets on the Channel, and (2) with packets sent to other devices.
Device in STBY and refreshing rows at the t_REF,MAX period.
Device in ATTN. This is the average for a device in ATTN with (1) no
packets on the Channel, and (2) with packets sent to other devices.
Device in ATTN. ACT command every 8•t_CYCLE, PRE command every
8•t_CYCLE, WR command every 4•t_CYCLE, and data is 1100..1100
Device in ATTN. ACT command every 8•t_CYCLE, PRE command every
8•t_CYCLE, RD command every 4•t_CYCLE, and data is 1111..1111^c
Max
Max
Min (1066MHz, - (800MHz,
32P/-32/-35) -40/-45)
-
6000
-
4
-
100
6000
4
80
-
100
80
-
150
120
-
790(x18)^b
620(x18)
730(x16)
575(x16)
-
700(x18)
560(x18)
650(x16)
530(x16)
Unit
µA
mA
mA
mA
mA
mA
mA
a. CMOS interface consumes power in all power states.
b. x18/x16 RDRAM data width.
c. This does not include the I_OL sink current. The RDRAM dissipates I_OL•V_OL in each output driver when a logic one is driven.
Table 16: Supply Current at Initialization
Symbol
I_DD,PWRUP,D
I_DD,SETR,D
Parameter
I_DD from power -on to SETR
I_DD from SETR to CLRR
Allowed Range of t_CYCLE
1.875ns to 2.5ns
1.875ns to 2.5ns
a. The supply current will be 150mA when t_CYCLE is in the range 15ns to 1000ns.
V_DD
V_DD,MIN
V_DD,MIN
Min
-
-
Max
200^a
332
Unit
mA
mA
Page 16
Version 1.4 July 2002