K4D551638F-TC Datasheet, PDF (3/16 Pages) Samsung semiconductor – 256Mbit GDDR SDRAM

K4D551638F-TC
Target Spec
256M GDDR SDRAM
4M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM
with Bi-directional Data Strobe and DLL
FEATURES
• 2.6V + 0.1V power supply for device operation
• 2.6V + 0.1V power supply for I/O interface
• SSTL_2 compatible inputs/outputs
• 4 banks operation
• MRS cycle with address key programs
-. Read latency 3 (clock)
-. Burst length (2, 4 and 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive
going edge of the system clock
• Differential clock input
• No Write-Interrupted by Read Function
• 2 DQS’s ( 1DQS / Byte )
• Data I/O transactions on both edges of Data strobe
• DLL aligns DQ and DQS transitions with Clock transition
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• DM for write masking only
• Auto & Self refresh
• 64ms refresh period (8K cycle)
• 66pin TSOP-II
• Maximum clock frequency up to 300MHz
• Maximum data rate up to 600Mbps/pin
ORDERING INFORMATION
Part NO.
K4D551638F-TC33
K4D551638F-TC36
K4D551638F-TC40
K4D551638F-TC50
K4D551638F-TC60*
Max Freq.
300MHz
275MHz
250MHz
200MHz
166MHz
1. K4D551638F-LC is the Lead Free package part number.
2. For the K4D551638F-TC60, VDD & VDDQ = 2.5V + 5%
3. For the K4D551638F-TC36, VDD & VDDQ = 2.8V + 0.1V
4. For the K4D551638F-TC33, VDD & VDDQ = 2.8V ~ 2.95V
Max Data Rate
600Mbps/pin
550Mbps/pin
500Mbps/pin
400Mbps/pin
333Mbps/pin
Interface
SSTL_2
Package
66pin TSOP-II
GENERAL DESCRIPTION
FOR 4M x 16Bit x 4 Bank GDDR SDRAM
The K4D551638F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by
16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 1.1GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of
operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety
of high performance memory system applications.
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Rev 1.7 (June 2004)