K4D551638F-TC Datasheet, PDF (2/16 Pages) Samsung semiconductor – 256Mbit GDDR SDRAM

K4D551638F-TC
Target Spec
256M GDDR SDRAM
Revision History
Revision 1.7 (June 15, 2004) - Target Spec
• Changed VDD/VDDQ of K4D551638F-TC33 from 2.8V + 0.1V to 2.8V(min)/2.95V(max)
Revision 1.6 (March 31, 2004) - Target Spec
• AC Changes : Refer to the AC characteristics of page 13 and 14.
Revision 1.5 (March 18, 2004) - Target Spec
• Added K4D551638F-TC33 in the data sheet.
Revision 1.4 (February 27, 2004) - Target Spec
• Added K4D551638F-TC36/40 in the data sheet.
Revision 1.3 (December 5, 2003)
• Changed VDD/VDDQ of K4D551638F-TC50 from 2.5V + 5% to 2.6V + 0.1V
Revision 1.2 (November 11, 2003)
• "Wrtie-Interrupted by Read Function" is supported
Revision 1.1 (October 13, 2003)
• Defined ICC7 value
Revision 1.0 (October 10, 2003)
• Defined DC spec
• Changed part number of 16Mx16 GDDR F-die from K4D561638F-TC to K4D551638F-TC.
Revision 0.1 (October 2, 2003) - Target Spec
• Added Lead free package part number in the data sheet.
• Removed K4D561638F-TC40 from the data sheet.
Revision 0.0 (July 2, 2003) - Target Spec
• Defined Target Specification
-2-
Rev 1.7 (June 2004)