K4D551638F-TC Datasheet, PDF (11/16 Pages) Samsung semiconductor – 256Mbit GDDR SDRAM

K4D551638F-TC
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
Target Spec
256M GDDR SDRAM
Parameter
Symbol
Test Condition
Operating Current
(One Bank Active)
ICC1
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
Precharge Standby Current
in Power-down mode
ICC2P
CKE ≤ VIL(max), tCC= tCC(min)
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
Active Standby Current
power-down mode
ICC3P CKE ≤ VIL(max), tCC= tCC(min)
Active Standby Current in
in Non Power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
Operating Current
(Burst Mode)
ICC4
tRC ≥ tRFC(min)tRC ≥ tRFC(min)
Page Burst, All Banks activated.
Refresh Current
ICC5
tRC ≥ tRFC(min)
Self Refresh Current
ICC6
CKE ≤ 0.2V
Operating Current
(4Bank Interleaving)
ICC7
Burst Length=4, tRC ≥ tRFC(min)
IOL=0mA, tCC = tCC(min)
Note : 1. Measured with outputs open.
2. Refresh period is 64ms
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TBD
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TBD
TBD
TBD
Version
-36 -40 -50
TBD TBD 150
TBD TBD
4
TBD TBD 25
TBD TBD 55
TBD TBD 75
TBD TBD 250
TBD TBD 200
TBD TBD
3
TBD TBD 380
Unit Note
-60
125 mA 1
3
mA
20 mA
35 mA
56 mA
200 mA
180 mA 2
3
mA
350 mA
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, VDD=2.6V+ 0.1V, VDDQ=2.6V+ 0.1V ,TA=0 to 65°C)
Parameter
Input High (Logic 1) Voltage; DQ
Symbol
Min
Typ
VIH
VREF+0.35
-
Max
Unit
-
V
Input Low (Logic 0) Voltage; DQ
VIL
-
Clock Input Differential Voltage; CK and CK
VID
0.7
-
VREF-0.35
V
-
VDDQ+0.6
V
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
Note
1
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
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Rev 1.7 (June 2004)