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K4D261638E Datasheet, PDF (3/16 Pages) Samsung semiconductor – 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM | |||
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K4D261638E
128M DDR SDRAM
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
with Bi-directional Data Strobe and DLL
FEATURES
⢠2.5V + 5% power supply for device operation
⢠2.5V + 5% power supply for I/O interface
⢠SSTL_2 compatible inputs/outputs
⢠4 banks operation
⢠MRS cycle with address key programs
-. Read latency 3, 4 (clock)
-. Burst length (2, 4 and 8)
-. Burst type (sequential & interleave)
⢠All inputs except data & DM are sampled at the positive
going edge of the system clock
⢠Differential clock input
⢠No Wrtie-Interrupted by Read Function
⢠2 DQSâs ( 1DQS / Byte )
⢠Data I/O transactions on both edges of Data strobe
⢠DLL aligns DQ and DQS transitions with Clock transition
⢠Edge aligned data & data strobe output
⢠Center aligned data & data strobe input
⢠DM for write masking only
⢠Auto & Self refresh
⢠32ms refresh period (4K cycle)
⢠66pin TSOP-II
⢠Maximum clock frequency up to 350MHz
⢠Maximum data rate up to 700Mbps/pin
ORDERING INFORMATION
Part NO.
K4D261638E-TC2A
K4D261638E-TC33
K4D261638E-TC36
K4D261638E-TC40
K4D261638E-TC50
Max Freq.
350MHz
300MHz
275MHz
250MHz
200MHz
For the K4D261638E-TC2A, VDD & VDDQ = 2.8V+0.1V
Max Data Rate
700Mbps/pin
600Mbps/pin
550Mbps/pin
500Mbps/pin
400Mbps/pin
Interface
SSTL_2
Package
66pin TSOP-II
GENERAL DESCRIPTION
FOR 2M x 16Bit x 4 Bank DDR SDRAM
The K4D261638E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by
16 bits, fabricated with SAMSUNGâs high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 1.4GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of
operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety
of high performance memory system applications.
-3-
Rev. 1.2 (Jul. 2003)
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