K4D261638E Datasheet, PDF (11/16 Pages) Samsung semiconductor – 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM

K4D261638E
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
128M DDR SDRAM
Parameter
Symbol
Test Condition
Operating Current
(One Bank Active)
ICC1
Precharge Standby Current
in Power-down mode
ICC2P
Precharge Standby Current
in Non Power-down mode
ICC2N
Active Standby Current
power-down mode
ICC3P
Active Standby Current in
in Non Power-down mode
ICC3N
Operating Current
( Burst Mode)
ICC4
Refresh Current
ICC5
Self Refresh Current
ICC6
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
CKE ≤ VIL(max), tCC= tCC(min)
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
CKE ≤ VIL(max), tCC= tCC(min)
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
tRC ≥ tRFC(min)tRC ≥ tRFC(min)
Page Burst, All Banks activated.
tRC ≥ tRFC(min)
CKE ≤ 0.2V
-2A
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Note : 1. Measured with outputs open.
2. Refresh period is 32ms.
Version
-33
-36
-40
210 200 190
70
100
90
80
80
75
70
150 140 130
380 360 340
320 310 290
4
Unit Note
-50
170 mA 1
mA
70 mA
65 mA
120 mA
320 mA
270 mA 2
mA
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, VDD=2.5V+ 5%, VDDQ=2.5V+ 5%,TA=0 to 65°C)
Parameter
Symbol
Min
Typ
Max
Unit
Input High (Logic 1) Voltage; DQ
VIH
VREF+0.35
-
-
V
Input Low (Logic 0) Voltage; DQ
VIL
-
-
VREF-0.35
V
Clock Input Differential Voltage; CK and CK
VID
0.7
-
VDDQ+0.6
V
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
Note
1
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
3. For the K4D261638E-TC2A, VDD & VDDQ = 2.8V+0.1V.
- 11 -
Rev. 1.2 (Jul. 2003)