K4H510438D Datasheet, PDF (21/24 Pages) Samsung semiconductor – 512Mb D-die DDR SDRAM Specification

K4H510438D
K4H510838D
K4H511638D
DDR SDRAM
23.0 IBIS : I/V Characteristics for Input and Output Buffers
DDR SDRAM Output Driver V-I Characteristics
DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1.
Figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input
into simulation tools. The driver characteristcs evaluation conditions are:
Typical
Minimum
Maximum
25×C
70×C
0×C
Vdd/Vddq = 2.5V, typical process
Vdd/Vddq = 2.3V, slow-slow process
Vdd/Vddq = 2.7V, fast-fast process
Output Driver Characteristic Curves Notes:
1. The full variation in driver current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines
the of the V-I curve of Figure 3 and 4.
2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figure 3 and 4.
3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity +/- 10%, for device drain to
source voltages from 0.1 to1.0. This specification is a design objective only. It is not guaranteed.
160
140
120
100
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
Pullup Characteristics for Full Strength Output Driver
Maximum
Typical High
Typical Low
Minimum
2.5
Vout(V)
0.0
1.0
2.0
0
-20
-40
-60
-80
-100
-120
-140
-160
-180
-200
-220
Pulldown Characteristics for Full Strength Output Driver
Minumum
Typical Low
Typical High
Maximum
Vout(V)
Figure 3. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Rev. 1.2 January 2006