K4H510438D Datasheet, PDF (14/24 Pages) Samsung semiconductor – 512Mb D-die DDR SDRAM Specification

K4H510438D
K4H510838D
K4H511638D
DDR SDRAM
16.0 AC Operating Conditions
Parameter/Condition
Symbol
Min
Max
Unit
Input High (Logic 1) Voltage, DQ, DQS and DM signals
VIH(AC) VREF + 0.31
V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL(AC)
VREF - 0.31
V
Input Differential Voltage, CK and /CK inputs
VID(AC)
0.7
VDDQ+0.6
V
Input Crossing Point Voltage, CK and /CK inputs
VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2
V
Note :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
Note
1
2
17.0 AC Overshoot/Undershoot specification for Address and Control Pins
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DDR400
1.5 V
1.5 V
4.5 V-ns
4.5 V-ns
Specification
DDR333
1.5 V
1.5 V
4.5 V-ns
4.5 V-ns
DDR266
1.5 V
1.5 V
4.5 V-ns
4.5 V-ns
VDD
Overshoot
5
4
3
2
Area
1
0
Maximum Amplitude = 1.5V
-1
-2
Maximum Amplitude = 1.5V
-3
GND
-4
-5
0 0.6875 1.5 2.5 3.5 4.5 5.5 6.3125 7.0
0.5 1.0 2.0 3.0 4.0 5.0 6.0 6.5
Tims(ns)
undershoot
AC overshoot/Undershoot Definition
Rev. 1.2 January 2006