K4H510438D Datasheet, PDF (15/24 Pages) Samsung semiconductor – 512Mb D-die DDR SDRAM Specification

K4H510438D
K4H510838D
K4H511638D
DDR SDRAM
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
Parameter
DDR400
Specification
DDR333
DDR266
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
1.2 V
1.2 V
2.4 V-ns
1.2 V
1.2 V
2.4 V-ns
1.2 V
1.2 V
2.4 V-ns
The area between the undershoot signal and GND must be less than or equal to
2.4 V-ns
2.4 V-ns
2.4 V-ns
VDDQ
Overshoot
5
4
Maximum Amplitude = 1.2V
3
2
Area
1
0
-1
-2
Maximum Amplitude = 1.2V
-3
GND
-4
-5
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Tims(ns)
undershoot
DQ/DM/DQS AC overshoot/Undershoot Definition
Rev. 1.2 January 2006