K4D553235F-GC Datasheet, PDF (2/18 Pages) Samsung semiconductor – 256M GDDR SDRAM

K4D553235F-GC
256M GDDR SDRAM
Revision History
Revision 1.6 (May 26, 2005)
• Added CL3 of MRS table
Revision 1.5 (March 16, 2005)
• Corrected the spec revision history from 1.1 ~ 1.4 as below.
Revision 1.4 (March 10, 2005)
• Added a tCK(min) value for -GC33@CL=3
Revision 1.3 (March 04, 2005)
• Removed K4D553235F-GC22 from the datasheet
Revision 1.2 (February 03, 2005)
• Removed -GJ from the spec which is no longer valid.
• Added a couple of note below AC timing table.
Revision 1.1 (December 14, 2004)
• Removed K4D553235F-GC20 from the specification.
• Dualized the 400MHz part’s part number by its operating voltage. Newly added -GJ25 operating voltage is equal to 2.0V(typical) which is in mass pro-
duction now. The 400MHz part with VDD & VDDQ= 1.8V(typical) which represented as -GC25 will be available by the 2nd quarter of ’05
• Added a couple of note below AC timing table.
Revision 1.0 (September 21, 2004)
• Defined DC specification
Revision 0.1 (June 16, 2004) - Target Spec
• Defined target specification
Revision 0.0 (May 07, 2004) - Target Spec
• Defined target specification
-2-
Rev 1.6 (May 2005)