K4D553235F-GC Datasheet, PDF (13/18 Pages) Samsung semiconductor – 256M GDDR SDRAM

K4D553235F-GC
256M GDDR SDRAM
AC CHARACTERISTICS (I)
Parameter
CK cycle time
CK high level width
CK low level width
DQS out access time from CK
Output access time from CK
Data strobe edge to Dout edge
Read preamble
Read postamble
CK to valid DQS-in
DQS-In setup time
DQS-in hold time
DQS write postamble
DQS-In high level width
DQS-In low level width
Address and Control input setup
Address and Control input hold
DQ and DM setup time to DQS
DQ and DM hold time to DQS
CL=3
CL=4
CL=5
CL=6
Symbol
tCK
tCH
tCL
tDQSCK
tAC
tDQSQ
tRPRE
tRPST
tDQSS
tWPRES
tWPREH
tWPST
tDQSH
tDQSL
tIS
tIH
tDS
tDH
Clock half period
tHP
Data Hold skew factor
Data output hold time from DQS
tQHS
tQH
-25
Min
Max
-
-
2.5
10.0
-
0.45
0.55
0.45
0.55
-0.45
0.45
-0.45
0.45
-
0.28
0.9
1.1
0.4
0.6
0.85
1.15
0
-
0.35
-
0.4
0.6
0.45
0.55
0.45
0.55
0.6
-
0.6
-
0.3
-
0.3
-
tCLmin
or
-
tCHmin
-
0.4
tHP-
tQHS
-
-2A
Min
Max
-
-
2.86
10.0
-
0.45
0.55
0.45
0.55
-0.55
0.55
-0.55
0.55
-
0.35
0.9
1.1
0.4
0.6
0.85
1.15
0
-
0.35
-
0.4
0.6
0.45
0.55
0.45
0.55
0.8
-
0.8
-
0.35
-
0.35
-
tCLmin
or
-
tCHmin
-
0.4
tHP-
tQHS
-
-33
Min
Max
5
3.3
-
10.0
-
0.45
0.55
0.45
0.55
-0.55
0.55
-0.55
0.55
-
0.35
0.9
1.1
0.4
0.6
0.85
1.15
0
-
0.35
-
0.4
0.6
0.45
0.55
0.45
0.55
0.8
-
0.8
-
0.35
-
0.35
-
tCLmin
or
-
tCHmin
-
0.4
tHP-
tQHS
-
Unit Note
ns
ns
ns
ns
tCK
tCK
ns
ns
ns
1
tCK
tCK
tCK
ns
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
1
ns
ns
1
Simplified Timing @ BL=2, CL=4
0
1
CK, CK
tCH
tCL
tCK
2
3
4
5
CS
DQS
DQ
DM
COMMAND _READA
tRPRE
tDQSCK
tRPST
tDQSQ
tAC
Qa1 Qa2
6
7
8
tIS
tIH
tDQSS
tWPREH
tDQSH
tDQSL
tWPRES
tDS tDH
Db0 Db1
WRITEB
- 13 -
Rev 1.6 (May 2005)