K4D553235F-GC Datasheet, PDF (11/18 Pages) Samsung semiconductor – 256M GDDR SDRAM

K4D553235F-GC
256M GDDR SDRAM
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
Parameter
Symbol
Test Condition
Operating Current
(One Bank Active)
ICC1
Precharge Standby Current
in Power-down mode
ICC2P
Precharge Standby Current
in Non Power-down mode
Active Standby Current
power-down mode
ICC2N
ICC3P
Active Standby Current
in Non Power-down mode
Operating Current
( Burst Mode)
ICC3N
ICC4
Refresh Current
ICC5
Self Refresh Current
ICC6
Operating Current
ICC7
(4Bank interleaving)
Note : 1 Refresh period is 32ms
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
CKE ≤ VIL(max), tCC= tCC(min)
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
CKE ≤ VIL(max), tCC= tCC(min)
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
IOL=0mA ,tCC= tCC(min),
Page Burst, All Banks activated.
tRC ≥ tRFC(min)
CKE ≤ 0.2V
Burst Length=4 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
Version
-25
-2A
-33
270
242
238
10
10
10
57
52
47
60
55
48
201
183
164
368
342
314
314
286
274
7
7
7
615
533
479
Unit Note
mA
mA
mA
mA
mA
mA
mA
1
mA
mA
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 65°C)
Parameter
Input High (Logic 1) Voltage ;DQ
Input Low (Logic 0) Voltage; DQ
Clock Input Differential Voltage; CK and CK
Symbol
Min
Typ
VIH
VREF+0.35
-
VIL
-
-
VID
0.7
-
Max
-
VREF-0.35
VDDQ+0.6
Unit
V
V
V
Note
1
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
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Rev 1.6 (May 2005)