K4T1G044QM Datasheet, PDF (18/29 Pages) Samsung semiconductor – 1Gb M-die DDR2 SDRAM Specification

1Gb M-die DDR2 SDRAM
DDR2 SDRAM
Input/Output capacitance
Parameter
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Symbol
CCK
CDCK
CI
CDI
CIO
CDIO
DDR2-400
Min
Max
1.0
2.0
x
0.25
1.0
2.0
x
0.25
2.5
4.0
x
0.5
DDR2-533
Min
Max
1.0
2.0
x
0.25
1.0
2.0
x
0.25
2.5
4.0
x
0.5
Units
pF
pF
pF
pF
pF
pF
Electrical Characteristics & AC Timing for DDR2-533/400
(0 °C < T_CASE < 95 °C; V_DDQ = 1.8V + 0.1V; V_DD = 1.8V + 0.1V)
Refresh Parameters by Device Density
Parameter
Symbol
256Mb 512Mb 1Gb 2Gb 4Gb Units
Refresh to active/Refresh command
time
tRFC
75
105
127.5 195 327.5
ns
Average periodic refresh interval
0 °C ≤ T_CASE ≤ 85°C
7.8
7.8
7.8
7.8
7.8
µs
tREFI
85 °C < T_CASE ≤ 95°C
3.9
3.9
3.9
3.9
3.9
µs
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Speed
DDR2-533(D5)
DDR2-400(CC)
Units
Bin (CL - tRCD - tRP)
4-4-4
3-3-3
Parameter
min
max
min
max
tCK, CL=3
5
8
5
8
ns
tCK, CL=4
3.75
8
5
8
ns
tRCD
15
15
ns
tRP
15
15
ns
tRC
55
55
ns
tRAS
40
70000
40
70000
ns
Page 18 of 29
Rev.1.1 Jan. 2005