K4H510738E Datasheet, PDF (16/22 Pages) Samsung semiconductor – Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)

DDR SDRAM stacked 512Mb E-die (x4/x8)
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Delta Slew Rate
tDS
tDH
Units
Notes
+/- 0.0 V/ns
0
0
ps
j
+/- 0.25 V/ns
+50
+50
ps
j
+/- 0.5 V/ns
+100
+100
ps
j
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
Pulldown slew
1.2 ~ 2.5
1.0
4.5
Notes
a,c,d,f,g,h
b,c,d,f,g,h
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
Pulldown slew
1.2 ~ 2.5
0.7
5.0
Notes
a,c,d,f,g,h
b,c,d,f,g,h
Table 7 : Output Slew Rate Matching Ratio Characteristics
AC CHARACTERISTICS
DDR266
PARAMETER
MIN
MAX
Output Slew Rate Matching Ratio (Pullup to Pulldown) TBD
TBD
DDR200
MIN
MAX
0.67
1.5
Notes
e,m
DDR SDRAM
Rev. 1.0 July. 2003