K4H510738E Datasheet, PDF (11/22 Pages) Samsung semiconductor – Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)

DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM I_DD spec table
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
AA(DDR266@CL=2.0)
100
120
6
40
36
35
65
165
140
180
6
3
290
AA(DDR266@CL=2.0)
100
120
6
40
36
35
65
165
140
180
6
3
290
st 128Mx4 (K4H510638E)
A2(DDR266@CL=2.0)
100
120
6
40
36
35
65
165
140
180
6
3
290
st 64Mx8 (K4H510738E)
A2(DDR266@CL=2.0)
100
120
6
40
36
35
65
165
140
180
6
3
290
DDR SDRAM
(V_DD=2.7V, T = 10°C)
B0(DDR266@CL=2.5)
100
120
6
40
36
35
65
165
140
180
6
3
290
B0(DDR266@CL=2.5)
100
120
6
40
36
35
65
165
140
180
6
3
290
Unit Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA Optional
mA
Unit Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA Optional
mA
Rev. 1.0 July. 2003