K4H510738E Datasheet, PDF (13/22 Pages) Samsung semiconductor – Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)

DDR SDRAM stacked 512Mb E-die (x4/x8)
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DDR SDRAM
Specification
DDR200/266
1.2 V
1.2 V
2.4 V-ns
2.4 V-ns
VDDQ
Overshoot
5
4
Maximum Amplitude = 1.2V
3
2
Area = 2.4V-ns
1
0
-1
-2
Maximum Amplitude = 1.2V
-3
GND
-4
-5
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Tims(ns)
undershoot
DQ/DM/DQS AC overshoot/Undershoot Definition
Rev. 1.0 July. 2003